Add to ORKGThis report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The parameters were studied using emission spectroscopy. The observed features of GaAs RIE are explained on the basis of a model including chemical and ion-stimulated components of the process.17
Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam ...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...
Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture usi...
58 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.The reactive ion etch rate of ...
Mass spectrometry of the plasma effluent during Reactive Ion Beam Etching (RIBE) of GaAs using an In...
Etch rate, edge profile, surface roughness, and electrical damage have been determined for reactive ...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
The experimental results on GaAs RIE in Cl2/Ar are considered within the framework of the ion-neutra...
The role of the inert gas additive (He, Ar, Xe) to C12 Inductively Coupled Plasmas for dry etching o...
The reactive ion etch (RIE) process, and its applications in gallium arsenic (GaAs) device fabricati...
The etching of Au using photoresist masks and hard masks on GaAs substrates was investigated using a...
Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam ...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...
Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture usi...
58 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.The reactive ion etch rate of ...
Mass spectrometry of the plasma effluent during Reactive Ion Beam Etching (RIBE) of GaAs using an In...
Etch rate, edge profile, surface roughness, and electrical damage have been determined for reactive ...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
International audienceA two-dimensional fluid model is used to study an industrial Ar/Cl2 inductivel...
The experimental results on GaAs RIE in Cl2/Ar are considered within the framework of the ion-neutra...
The role of the inert gas additive (He, Ar, Xe) to C12 Inductively Coupled Plasmas for dry etching o...
The reactive ion etch (RIE) process, and its applications in gallium arsenic (GaAs) device fabricati...
The etching of Au using photoresist masks and hard masks on GaAs substrates was investigated using a...
Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam ...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently,...