We discuss the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a GaAs-AlGaAs double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristi...
[[abstract]]The electrical characteristics of AlGaAs/GaAs double-barrier resonant tunneling structur...
Photoluminescence spectroscopy is used to investigate tunneling of electrons and holes through GaAs/...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with diff...
We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with diff...
Vita.In this thesis, the electron transport mechanisms and the current-voltage characteristics in on...
A self‐consistent quantum mechanical simulation is used to study the effect of spacer layer thicknes...
Transport of charge carriers in low-dimensional structures is often caused by tunneling effect. Tu...
Resonant tunneling devices are still under study today due to their multiple applications in optoele...
Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is p...
The consideration of space charge in the analysis of resonant tunneling devices leads to a substanti...
Vita.The major goal of this research is to understand the current transport mechanisms of the RTD(Re...
The purpose of this work is to determine the potential and capability of double barrier resonant tun...
Vita.The major goal of this research is to understand the current transport mechanisms of the RTD(Re...
In this chapter, a new type of field-effect transistors is considered with a gate and a channel on a...
[[abstract]]The electrical characteristics of AlGaAs/GaAs double-barrier resonant tunneling structur...
Photoluminescence spectroscopy is used to investigate tunneling of electrons and holes through GaAs/...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with diff...
We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with diff...
Vita.In this thesis, the electron transport mechanisms and the current-voltage characteristics in on...
A self‐consistent quantum mechanical simulation is used to study the effect of spacer layer thicknes...
Transport of charge carriers in low-dimensional structures is often caused by tunneling effect. Tu...
Resonant tunneling devices are still under study today due to their multiple applications in optoele...
Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is p...
The consideration of space charge in the analysis of resonant tunneling devices leads to a substanti...
Vita.The major goal of this research is to understand the current transport mechanisms of the RTD(Re...
The purpose of this work is to determine the potential and capability of double barrier resonant tun...
Vita.The major goal of this research is to understand the current transport mechanisms of the RTD(Re...
In this chapter, a new type of field-effect transistors is considered with a gate and a channel on a...
[[abstract]]The electrical characteristics of AlGaAs/GaAs double-barrier resonant tunneling structur...
Photoluminescence spectroscopy is used to investigate tunneling of electrons and holes through GaAs/...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...