Add to ORKGIn this paper, the electrical characteristics of through-silicon hole (TSH) structures are investigated. After validation with circuit model, the 3D full-wave simulations are employed to study the impacts of design parameters. The process variations including underfill and misalignment are also considered. Additionally, a single-end high-speed TSH channel is studied in the frequency-domain. The crack location is also presented by using Z-parameter variation
This paper proposes a procedure for estimating the location of open or short defects in a Through Si...
In this work, we present the high frequency extraction of electrical material properties of silicon ...
Silicon interposer technology with through-silicon-vias will play a significant role in the developm...
This paper presents an in- depth investigation of the silicon substrate characteristics based on fre...
Includes bibliographical references (p. 42-45)The 3D IC integration technology and silicon interpose...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
Development of through silicon via (TSV) based 3 dimensional integrated circuit (3D-IC) has allowed ...
In this paper, high frequency measurement of TSV structures under different DC bias conditions are c...
Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to th...
Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer ...
In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, ...
In this study, the effects of the frequencydependent characteristics of through-silicon vias (TSVs) ...
Through-silicon vias (TSVs) in low, medium and high resistivity silicon for 3-D chip integration and...
This paper proposes a procedure for estimating the location of open or short defects in a Through Si...
In this work, we present the high frequency extraction of electrical material properties of silicon ...
Silicon interposer technology with through-silicon-vias will play a significant role in the developm...
This paper presents an in- depth investigation of the silicon substrate characteristics based on fre...
Includes bibliographical references (p. 42-45)The 3D IC integration technology and silicon interpose...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
This work presents a study to build lumped models for fault-free and faulty Through Silicon Vias (TS...
Development of through silicon via (TSV) based 3 dimensional integrated circuit (3D-IC) has allowed ...
In this paper, high frequency measurement of TSV structures under different DC bias conditions are c...
Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss due to th...
Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer ...
In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, ...
In this study, the effects of the frequencydependent characteristics of through-silicon vias (TSVs) ...
Through-silicon vias (TSVs) in low, medium and high resistivity silicon for 3-D chip integration and...
This paper proposes a procedure for estimating the location of open or short defects in a Through Si...
In this work, we present the high frequency extraction of electrical material properties of silicon ...
Silicon interposer technology with through-silicon-vias will play a significant role in the developm...