ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and humid argon flow, and dry and humid nitrogen flow. Their properties have been investigated using scanning electron microscopy (SEM), X‐ray diffraction (XRD), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies (at different temperatures), and electron paramagnetic resonance (EPR) spectroscopy at –160 °C and room temperature. It is found that the fabrication conditions significantly influence the EPR and PL spectra obtained. While a g = 1.96 EPR signal is present in some of the samples, green PL emission can be observed from all the samples. Therefore, the green emission in our samples does not originate from the commonl...
The morphology and optical properties of ZnO nanostructures prepared by thermal evaporation of Zn u...
Tetrapod ZnO nanostructures with three different morphologies (rod-wire junction, dumbbell-like and ...
Zinc oxide is an important group II-VI semiconductor material with optical properties that permit st...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
The investigation of the properties of ZnO tetrapod and multipod structures using scanning electron ...
International audienceThe nature of defects in ZnO smoke was studied at different stages of the mate...
International audienceThe nature of defects in ZnO smoke was studied at different stages of the mate...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
ZnO tetrapod nanowires were prepared by thermal evaporation of Zn in the flow of different carrier g...
The morphology and optical properties of ZnO nanostructures prepared by thermal evaporation of Zn u...
ZnO tetrapods and nanowires were fabricated by a simple method of thermal evaporation of pure Zn pow...
The morphology and optical properties of ZnO nanostructures prepared by thermal evaporation of Zn u...
Tetrapod ZnO nanostructures with three different morphologies (rod-wire junction, dumbbell-like and ...
Zinc oxide is an important group II-VI semiconductor material with optical properties that permit st...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
ZnO tetrapod nanostructures have been prepared by the evaporation of Zn in air (no flow), dry and hu...
The investigation of the properties of ZnO tetrapod and multipod structures using scanning electron ...
International audienceThe nature of defects in ZnO smoke was studied at different stages of the mate...
International audienceThe nature of defects in ZnO smoke was studied at different stages of the mate...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
Zinc oxide (ZnO) is of great interest in photonic applications due to its wide bandgap (3.37 eV) and...
ZnO tetrapod nanowires were prepared by thermal evaporation of Zn in the flow of different carrier g...
The morphology and optical properties of ZnO nanostructures prepared by thermal evaporation of Zn u...
ZnO tetrapods and nanowires were fabricated by a simple method of thermal evaporation of pure Zn pow...
The morphology and optical properties of ZnO nanostructures prepared by thermal evaporation of Zn u...
Tetrapod ZnO nanostructures with three different morphologies (rod-wire junction, dumbbell-like and ...
Zinc oxide is an important group II-VI semiconductor material with optical properties that permit st...