The present paper investigates the influence of localized magnetic and electric fields, produced by a magnetic scanning tip, on the response of high-mobility two-dimensional electron gas in a Hall bar geometry. We have developed a comprehensive numerical model, validated it by experiment and found the optimal design for magnetic sensing and limitation of perturbing effects due to electric field. This approach can be straightforwardly extended to the design of sensors for the detection of charged magnetic nanoparticles
In this work we present a new method to fabricate planar Hall sensors from GaAs� AlGaAs heterojunct...
We report quenching of the Hall effect with increasing magnetic field confined in a micron-sized spo...
AbstractA novel Hall device with enhanced magnetosensitivity has been implemented and tested. For th...
The present paper investigates the influence of localized magnetic and electric fields, produced by ...
This paper deals with the numerical modeling of the electric potential distribution inside semicondu...
We have fabricated and characterized Hall probes on an In0.75Al0.25As/In0.75Ga0.25As two-dimensional...
This paper presents a numerical model for the study of micro-Hall magnetometry applications, aiming ...
This paper investigates the suitability of miniaturized semiconductor Hall devices for the quantific...
By means of focused ion beam milling, we fabricate Hall magnetometers with active areas as small as ...
Scanning force microscope measurements of the Hall potential distribution of a two-dimensional elec...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and opt...
One of the most popular magnetic field sensors are Hall effect sensors. These semiconductor sensors,...
We report the response of sub-micron epitaxial graphene Hall devices to localized and inhomogeneous ...
While planar Hall effect based magnetic field detection is a well-studied area, the sensing capabili...
In this work we present a new method to fabricate planar Hall sensors from GaAs� AlGaAs heterojunct...
We report quenching of the Hall effect with increasing magnetic field confined in a micron-sized spo...
AbstractA novel Hall device with enhanced magnetosensitivity has been implemented and tested. For th...
The present paper investigates the influence of localized magnetic and electric fields, produced by ...
This paper deals with the numerical modeling of the electric potential distribution inside semicondu...
We have fabricated and characterized Hall probes on an In0.75Al0.25As/In0.75Ga0.25As two-dimensional...
This paper presents a numerical model for the study of micro-Hall magnetometry applications, aiming ...
This paper investigates the suitability of miniaturized semiconductor Hall devices for the quantific...
By means of focused ion beam milling, we fabricate Hall magnetometers with active areas as small as ...
Scanning force microscope measurements of the Hall potential distribution of a two-dimensional elec...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and opt...
One of the most popular magnetic field sensors are Hall effect sensors. These semiconductor sensors,...
We report the response of sub-micron epitaxial graphene Hall devices to localized and inhomogeneous ...
While planar Hall effect based magnetic field detection is a well-studied area, the sensing capabili...
In this work we present a new method to fabricate planar Hall sensors from GaAs� AlGaAs heterojunct...
We report quenching of the Hall effect with increasing magnetic field confined in a micron-sized spo...
AbstractA novel Hall device with enhanced magnetosensitivity has been implemented and tested. For th...