Low specific ohmic contacts to n-type germanium using a low temperature NiGe process

A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 +/- 0.4) x 10⁻⁷ Ω-cm∧2, with a low transfer length of (0.95 +/- 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 10¹⁹ cm-3