Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy

Room‐temperature and low‐temperature photoluminescence from quantum well In0.53Ga0.47As/InP structures grown by molecular beam epitaxy is reported for the first time. A range of well thicknesses from 240 down to 10 Å was studied. Emission as short as 1.16 μm (1.07 eV) at 3.8 K and 1.22 μm (1.02 eV) at 300 K was observed from a well ∼10 Å, and the overall luminescence efficiency of the structure was ∼50 times greater than that of a quaternary sample of similar carrier concentration grown by liquid phase epitaxy. The full width half‐maximum of the photoluminescence peak from a 20‐Å well was 11.6 meV at 3.8 K. These results indicate the cladding InP as well as the interfaces are of very high quality