New results for propagation losses, 4.7 dB/cm, in (Al,Ga)As multiple quantum well (MQW) waveguides subjected to impurity induced disordering (IID) are described. Substantial, up to 90 meV, blue shifts in the absorption edge imply the suitability of this IID process for optoelectronic integration applications
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
Transmission electron microscopy and photoluminescence data are used to show that a s i n g l eGaAsq...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
New results for propagation losses, 4.7 dB/cm, in (Al,Ga)As multiple quantum well (MQW) waveguides s...
Novel applications of impurity-induced disordering (IID) in semiconductor integrated optoelectronics...
Impurity‐induced disordering of GaAs/AlGaAs multiple quantum well waveguide structures has been carr...
Impurity Induced Layer Disordering (IILD) of a GaAs/AlGaAs Multi Quantum Well (MQW) structure is kno...
The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced L...
The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical wavegu...
A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been develo...
Optical waveguide type phase modulators defined by impurities induced disordering (IID) are investig...
Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the q...
Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing ...
The effect of boron and fluorine impurity‐induced disordering on the refractive index of AlxGa1−xAs ...
A nonlinear switch formed by the integration of an overmoded multi‐quantum‐well (MQW) section with d...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
Transmission electron microscopy and photoluminescence data are used to show that a s i n g l eGaAsq...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
New results for propagation losses, 4.7 dB/cm, in (Al,Ga)As multiple quantum well (MQW) waveguides s...
Novel applications of impurity-induced disordering (IID) in semiconductor integrated optoelectronics...
Impurity‐induced disordering of GaAs/AlGaAs multiple quantum well waveguide structures has been carr...
Impurity Induced Layer Disordering (IILD) of a GaAs/AlGaAs Multi Quantum Well (MQW) structure is kno...
The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced L...
The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical wavegu...
A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been develo...
Optical waveguide type phase modulators defined by impurities induced disordering (IID) are investig...
Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the q...
Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing ...
The effect of boron and fluorine impurity‐induced disordering on the refractive index of AlxGa1−xAs ...
A nonlinear switch formed by the integration of an overmoded multi‐quantum‐well (MQW) section with d...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
Transmission electron microscopy and photoluminescence data are used to show that a s i n g l eGaAsq...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...