Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the quantum wells have been intermixed by neutral impurity disordering. Threshold currents of devices with integrated 600- mu m passive guides show an increase of less than 10% over normal Fabry-Perot lasers of the same active length, confirming that the propagation loss in the passive wavelength is significantly reduced by disordering to 4.5+or-2 cm/sup -1/. Comparison with unimplanted devices suggests that the implanted dopant also passivates the waveguide electrically
A broadly tunable MQW laser utilizing a combined impurity-free vacancy disordering and beam steering...
dielectric caps to induce selective quantum-well (QW) intermixing in the GaAs–AlGaAs system is studi...
We describe a method of silicon oxide capped disordering of GaAs/AlGaAs multiple quantum wells (MQW)...
Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the q...
By using phosphorous doped (5% wt P) silica as masking material and standard silica capping to promo...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
New results for propagation losses, 4.7 dB/cm, in (Al,Ga)As multiple quantum well (MQW) waveguides s...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Se...
A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been develo...
The bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material can be accurately tuned by photoa...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-fre...
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means fo...
Novel applications of impurity-induced disordering (IID) in semiconductor integrated optoelectronics...
A broadly tunable MQW laser utilizing a combined impurity-free vacancy disordering and beam steering...
dielectric caps to induce selective quantum-well (QW) intermixing in the GaAs–AlGaAs system is studi...
We describe a method of silicon oxide capped disordering of GaAs/AlGaAs multiple quantum wells (MQW)...
Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the q...
By using phosphorous doped (5% wt P) silica as masking material and standard silica capping to promo...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
New results for propagation losses, 4.7 dB/cm, in (Al,Ga)As multiple quantum well (MQW) waveguides s...
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce s...
Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Se...
A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been develo...
The bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material can be accurately tuned by photoa...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-fre...
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means fo...
Novel applications of impurity-induced disordering (IID) in semiconductor integrated optoelectronics...
A broadly tunable MQW laser utilizing a combined impurity-free vacancy disordering and beam steering...
dielectric caps to induce selective quantum-well (QW) intermixing in the GaAs–AlGaAs system is studi...
We describe a method of silicon oxide capped disordering of GaAs/AlGaAs multiple quantum wells (MQW)...