Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm

We report the use of a novel impurity free vacancy disordering technique which has been used to produce waveguides with different Kerr‐type nonlinear coefficients. The technique relies on standard SiO2 dielectric caps to promote disordering and Ga2O3 caps to suppress disordering. Band‐gap shifts of around 40 nm and consequent changes in n2 of more than 60% are reported