Add to ORKGIn this work, for the first time we employ ensemble Monte Carlo /2D-Poisson-Schrödinger to study the impact of golden ratio Phi on the performance of the vertically stacked lateral silicon nanowire transistor. The design of experiment and solution for the uniformity of the current density are also discussed
Nanowire transistors (NWTs) represent a potential alternative to Silicon FinFET technology in the 5n...
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a comprehensive computational study of silicon nanowire transistor (SNT) an...
In this work, for the first time we employ ensemble Monte Carlo /2D-Poisson-Schrödinger to study the...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
An observation was made in this research regarding the fact that the signatures of isotropic charge ...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this work, we observed the signatures of isotropic charge distributions showing the same attribut...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
Nanowire transistors (NWTs) represent a potential alternative to Silicon FinFET technology in the 5n...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
Nanowire transistors (NWTs) represent a potential alternative to Silicon FinFET technology in the 5n...
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a comprehensive computational study of silicon nanowire transistor (SNT) an...
In this work, for the first time we employ ensemble Monte Carlo /2D-Poisson-Schrödinger to study the...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
An observation was made in this research regarding the fact that the signatures of isotropic charge ...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this work, we observed the signatures of isotropic charge distributions showing the same attribut...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
Nanowire transistors (NWTs) represent a potential alternative to Silicon FinFET technology in the 5n...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
Nanowire transistors (NWTs) represent a potential alternative to Silicon FinFET technology in the 5n...
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a comprehensive computational study of silicon nanowire transistor (SNT) an...