In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation of the lateral NWTs as new sources of process variability
An observation was made in this research regarding the fact that the signatures of isotropic charge ...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated,...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
In this work, we present a comprehensive computational study of the impact of the principle sources ...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this work, for the first time we employ ensemble Monte Carlo /2D-Poisson-Schrödinger to study the...
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated,...
International audienceThis work presents the performance and transport characteristics of vertically...
International audienceThis work presents the performance and transport characteristics of vertically...
An observation was made in this research regarding the fact that the signatures of isotropic charge ...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated,...
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (N...
In this work, we present a comprehensive computational study of the impact of the principle sources ...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this work we present a simulation study of Si80Ge20 and Silicon vertically stacked lateral nanowi...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this work, we present a simulation study of vertically stacked lateral nanowires transistors (NWT...
In this work, for the first time we employ ensemble Monte Carlo /2D-Poisson-Schrödinger to study the...
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated,...
International audienceThis work presents the performance and transport characteristics of vertically...
International audienceThis work presents the performance and transport characteristics of vertically...
An observation was made in this research regarding the fact that the signatures of isotropic charge ...
In this paper we present a simulation study of 5nm vertically stacked lateral nanowires transistor (...
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated,...