This paper presents the realization of different Vertical Hall Sensors (VHSs) implemented using a 0.18-μm CMOS technology and mounted on flexible substrates. Various geometries of VHS have been studied to obtain the optimum sensor device dimension and shape. COMSOL multiphysics simulation results are validated with respect to the electrical behaviour of an 8-resistor Verilog-A model implemented in Cadence environment. Simulation and measurement results are in good agreement. The use of polymeric foils and current spinning technique compensate for the effects caused by mechanical stress and possible fabrication imperfections. Measurement results for a low-offset basic VHS in planar state show a sensitivity of 59±1 V(AT)-1 in volt...
AbstractVertical Hall-effect devices (VHDs) are CMOS integrated sensors dedicated to the measurement...
Magnetomyography utilizes magnetic sensors to record small magnetic fields produced by the electrica...
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complement...
This paper presents the realization of different Vertical Hall Sensors (VHSs) implemented using a 0...
Four different geometries of a vertical Hall sensor are presented and studied in this paper. The cu...
AbstractThis paper reports on a novel vertical Hall sensor with ultra-low offset (ULOVHS) for the me...
This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors o...
This paper presents a four-folded current-mode vertical Hall device. The current spinning technique ...
This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnet...
This paper proposes a new implementation method to significantly improve the magnetic sensitivity of...
A Hall magnetic sensor working in the current domain and its electronic interface are presented. The...
AbstractThis paper reports on the characterization of the stress-dependent magnetic sensitivity of C...
The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sens...
Hall-effect devices make up by far the largest part of all magnetic sensors on the market today. The...
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MO...
AbstractVertical Hall-effect devices (VHDs) are CMOS integrated sensors dedicated to the measurement...
Magnetomyography utilizes magnetic sensors to record small magnetic fields produced by the electrica...
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complement...
This paper presents the realization of different Vertical Hall Sensors (VHSs) implemented using a 0...
Four different geometries of a vertical Hall sensor are presented and studied in this paper. The cu...
AbstractThis paper reports on a novel vertical Hall sensor with ultra-low offset (ULOVHS) for the me...
This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors o...
This paper presents a four-folded current-mode vertical Hall device. The current spinning technique ...
This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnet...
This paper proposes a new implementation method to significantly improve the magnetic sensitivity of...
A Hall magnetic sensor working in the current domain and its electronic interface are presented. The...
AbstractThis paper reports on the characterization of the stress-dependent magnetic sensitivity of C...
The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sens...
Hall-effect devices make up by far the largest part of all magnetic sensors on the market today. The...
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MO...
AbstractVertical Hall-effect devices (VHDs) are CMOS integrated sensors dedicated to the measurement...
Magnetomyography utilizes magnetic sensors to record small magnetic fields produced by the electrica...
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complement...