Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing

Data are presented showing that wavelength modification, of at least 210 Å (from 8180 to 7970 Å), of broad area room temperature pulsed quantum wellheterostructure (QWH) laser diodes is possible by thermal annealing. Thermal annealing at 900 °C for 8 h results in only a minor change in the threshold current density, 385–425 A/cm2, thus making possible similar wavelength modification (8180–8080 Å) of c o n t i n u o u s (cw) 300 K stripe‐geometry QWH laser diodes