The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defense and oil and gas industries. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only
GaN-based laser diodes have been developed over the last 20 years making them desirable for many sec...
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging techno...
Latest developments in single mode, high frequency and high power AlGaInN laser diode technology are...
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavel...
The latest developments in AlGaInN laser diode technology are reviewed for defence and security appl...
The latest developments in AlGaInN laser diode technology are reviewed for defence applications such...
The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sen...
Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology f...
The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system ...
AlGaInN ridge waveguide laser diodes are fabricated to achieve single-mode operation with optical po...
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and s...
Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in fr...
Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applic...
International Telemetering Conference Proceedings / September 28-30, 1982 / Sheraton Harbor Island H...
Quantum technologies containing key GaN laser components will enable a new generation of precision s...
GaN-based laser diodes have been developed over the last 20 years making them desirable for many sec...
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging techno...
Latest developments in single mode, high frequency and high power AlGaInN laser diode technology are...
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavel...
The latest developments in AlGaInN laser diode technology are reviewed for defence and security appl...
The latest developments in AlGaInN laser diode technology are reviewed for defence applications such...
The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sen...
Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology f...
The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system ...
AlGaInN ridge waveguide laser diodes are fabricated to achieve single-mode operation with optical po...
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and s...
Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in fr...
Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applic...
International Telemetering Conference Proceedings / September 28-30, 1982 / Sheraton Harbor Island H...
Quantum technologies containing key GaN laser components will enable a new generation of precision s...
GaN-based laser diodes have been developed over the last 20 years making them desirable for many sec...
Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging techno...
Latest developments in single mode, high frequency and high power AlGaInN laser diode technology are...