Add to ORKGThe demand for higher frequency applications is growing and a solid-state source for THz frequencies is needed. We compare experimentally demonstarted results of resonant tunneling diode and planar Gunn diodes for terahertz technology. The highest power demonstrated for W-band RTD oscillators at 75.2 GHz with -0.2 dBm (0.96 mW) and at 300GHz for submicron planar Gunn with -16dBm (28μW) are compared as the potential solid-state source for Terahertz applications
Terahertz (THz) technology has been generating a lot of interest due to the numerous potential appli...
[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations...
This paper presents millimetre-wave (nm-wave) and terahertz (THz) multi-gigabit wireless links which...
The demand for higher frequency applications is growing and a solid-state source for THz frequencies...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
This paper presents a series of monolithic microwave integrated circuit (MMIC) resonant tunneling di...
Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based s...
Resonant tunneling diode (RTD) is the fastest solid-state electronic device with the highest reporte...
High-quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and...
This paper will discuss resonant tunnelling diode (RTD) sources being developed on a European projec...
This paper will discuss resonant tunnelling diode (RTD) sources being developed on a European projec...
Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the T...
In recent years remarkable progress has been made in filling the “terahertz gap” of compact sources ...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
This chapter aims to provide a description of the state-of-the-art of the rapidly developing solid-s...
Terahertz (THz) technology has been generating a lot of interest due to the numerous potential appli...
[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations...
This paper presents millimetre-wave (nm-wave) and terahertz (THz) multi-gigabit wireless links which...
The demand for higher frequency applications is growing and a solid-state source for THz frequencies...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
This paper presents a series of monolithic microwave integrated circuit (MMIC) resonant tunneling di...
Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based s...
Resonant tunneling diode (RTD) is the fastest solid-state electronic device with the highest reporte...
High-quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and...
This paper will discuss resonant tunnelling diode (RTD) sources being developed on a European projec...
This paper will discuss resonant tunnelling diode (RTD) sources being developed on a European projec...
Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the T...
In recent years remarkable progress has been made in filling the “terahertz gap” of compact sources ...
The length of the transit region of a Gunn diode determines the natural frequency at which it operat...
This chapter aims to provide a description of the state-of-the-art of the rapidly developing solid-s...
Terahertz (THz) technology has been generating a lot of interest due to the numerous potential appli...
[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations...
This paper presents millimetre-wave (nm-wave) and terahertz (THz) multi-gigabit wireless links which...