A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes
- Khalid, A.-u-H.
- Li, C.
- Papageorgiou, V.
- Pilgrim, N.J.
- Dunn, G.M.
- Cumming, D.
DOIAbstract
We present a multiquantum-well channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAs-based planar Gunn diodes. For a 1.14 μm length and 60 μm wide device, the highest power achieved was approximately −4 dBm operating in fundamental mode at 109 GHz, and −26.6 dBm at its second harmonic at 218 GHz. The DC-to-RF conversion efficiency was ∼0.3% for the fundamental mode of oscillation
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