The monolithic integration of four 1.5 μm range AlGaInAs/InP distributed feedback lasers with a 4×1 multimode-interference optical combiner, a curved semiconductor optical amplifier, and an electro-absorption modulator using relatively simple technologies—sidewall grating and quantum well intermixing—has been demonstrated. The four channels span the wavelength range of 1530 to 1566 nm with a channel spacing of 12 nm . The epitaxial structure was designed to produce a far-field pattern as small as 21.2°×25.1°, producing a coupling efficiency with an angled-end single-mode fiber at twice that of a conventional device design
A novel laser structure containing four amplifiers and a monolithically integrated passive multimode...
The technique of wavelength division multiplexing (WDM) is currently attracting considerable interes...
A new device of two parallel distributed feedback ( DFB) laser integrated monolithically with Y-bran...
The monolithic integration of four 1.50-mu m range AlGaInAs/InP distributed feed-back lasers with a ...
A 1.56 μm distributed feedback laser monolithically integrated with three stages of multi-mode inter...
We report a low-cost manufacturing approach for fabricating monolithic multi-wavelength sources for ...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
A novel multi-wavelength laser monolithically integrated on InP is presented. The device consists of...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
We present a laterally coupled 1.55 μm AlGaInAs/InP distributed feedback laser monolithically integr...
Selective area growth (SAG) technology has been added to an established InP monolithic integration p...
International audienceWe present the design of a widely tunable monolithic source on GaAs/AlGaAs. It...
We present a laterally coupled 1.55-μm distributed feedback laser monolithically integrated with mul...
We present a laterally coupled 1.55 μm AlGaInAs/InP distributed feedback laser monolithically integr...
© 2017 Optical Society of America. We demonstrate monolithic integration of a wavelength division mu...
A novel laser structure containing four amplifiers and a monolithically integrated passive multimode...
The technique of wavelength division multiplexing (WDM) is currently attracting considerable interes...
A new device of two parallel distributed feedback ( DFB) laser integrated monolithically with Y-bran...
The monolithic integration of four 1.50-mu m range AlGaInAs/InP distributed feed-back lasers with a ...
A 1.56 μm distributed feedback laser monolithically integrated with three stages of multi-mode inter...
We report a low-cost manufacturing approach for fabricating monolithic multi-wavelength sources for ...
We report on the design and experimental results of monolithically integrated optoelec-tronic device...
A novel multi-wavelength laser monolithically integrated on InP is presented. The device consists of...
The monolithic integration of four 10-GHz 1.55-mu m AlGaInAs/InP mode-locked surface-etched distribu...
We present a laterally coupled 1.55 μm AlGaInAs/InP distributed feedback laser monolithically integr...
Selective area growth (SAG) technology has been added to an established InP monolithic integration p...
International audienceWe present the design of a widely tunable monolithic source on GaAs/AlGaAs. It...
We present a laterally coupled 1.55-μm distributed feedback laser monolithically integrated with mul...
We present a laterally coupled 1.55 μm AlGaInAs/InP distributed feedback laser monolithically integr...
© 2017 Optical Society of America. We demonstrate monolithic integration of a wavelength division mu...
A novel laser structure containing four amplifiers and a monolithically integrated passive multimode...
The technique of wavelength division multiplexing (WDM) is currently attracting considerable interes...
A new device of two parallel distributed feedback ( DFB) laser integrated monolithically with Y-bran...