We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3-quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4-80 MHz), while demonstrating a low divergence angle (12.7 degrees x26.3 degrees) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser
Passive mode locking at 40GHz is reported on AlGaInAs strained multi-quantum-well lasers. The device...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well activ...
In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55...
We report on subpicosecond pulse generation using passively mode-locked laser diodes based on AlGaIn...
We report subpicosecond pulse generation at 22 GHz from a two-section passively mode-locked laser at...
We report on subpicosecond pulse generation using passively mode-locked laser diodes based on AlGaIn...
A 240 GHz, sixth-harmonic monolithic ~1.55 μm colliding-pulse mode-locked laser is reported using a ...
We report femtosecond pulses from a passive C-band two-section AlGaInAs/InP mode-locked laser with a...
We report for the first time 490 fs pulse duration at a repetition frequency ~38 GHz from a passive ...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
Passive mode locking at 40GHz is reported on AlGaInAs strained multi-quantum-well lasers. The device...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well activ...
In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55...
We report on subpicosecond pulse generation using passively mode-locked laser diodes based on AlGaIn...
We report subpicosecond pulse generation at 22 GHz from a two-section passively mode-locked laser at...
We report on subpicosecond pulse generation using passively mode-locked laser diodes based on AlGaIn...
A 240 GHz, sixth-harmonic monolithic ~1.55 μm colliding-pulse mode-locked laser is reported using a ...
We report femtosecond pulses from a passive C-band two-section AlGaInAs/InP mode-locked laser with a...
We report for the first time 490 fs pulse duration at a repetition frequency ~38 GHz from a passive ...
Abstract: We report electrical and optical injection locking of an InP colliding pulse mode locked l...
Passive mode locking at 40GHz is reported on AlGaInAs strained multi-quantum-well lasers. The device...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comp...