We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2 ps (10 kHz–100 MHz), and a radio frequency linewidth of 25 kHz
High-power semiconductor DFB lasers with low divergence angle fundamental transverse mode operating ...
We report on a 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and 0.036...
International audienceThis paper reports recent results on InAs/InP quantum dash-based, two-section,...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
We report a low noise, frequency stabilized, semiconductor based, 10.287 GHz actively mode-locked la...
A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well activ...
A 10 GHz mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier with an intra-cavity ...
A low noise, semiconductor based, frequency stabilized, 10.24 GHz mode-locked laser with a pulse tim...
A low noise, frequency stabilized, semiconductor based, 10.287 GHz mode-locked laser with 1000 fines...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
Repetition rate and wavelength tuning of monolithic 40 GHz InP-based pulse lasers are investigated e...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
High-power semiconductor DFB lasers with low divergence angle fundamental transverse mode operating ...
We report on a 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and 0.036...
International audienceThis paper reports recent results on InAs/InP quantum dash-based, two-section,...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
We present an 80-GHz lambda similar to 1.55 mu m passively colliding-pulse mode-locked laser based o...
We report a low noise, frequency stabilized, semiconductor based, 10.287 GHz actively mode-locked la...
A monolithic ~1.55-μm colliding-pulse mode-locked AlGaInAs/InP laser with a three-quantum-well activ...
A 10 GHz mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier with an intra-cavity ...
A low noise, semiconductor based, frequency stabilized, 10.24 GHz mode-locked laser with a pulse tim...
A low noise, frequency stabilized, semiconductor based, 10.287 GHz mode-locked laser with 1000 fines...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etche...
Repetition rate and wavelength tuning of monolithic 40 GHz InP-based pulse lasers are investigated e...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semicondu...
High-power semiconductor DFB lasers with low divergence angle fundamental transverse mode operating ...
We report on a 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and 0.036...
International audienceThis paper reports recent results on InAs/InP quantum dash-based, two-section,...