High Performance Visible Semiconductor Lasers Operating at 630 nm

Qui, B.
Kowalski, O.P.
McDougall, S.D.
Schmidt, B.
Marsh, J.

Publication date

January 2010

Abstract

630 nm single mode lasers with a V-profile layer incorporated within the waveguide core exhibit reduced fast axis divergence (19° FWHM) while maintaining a low threshold current (30 mA), making them ideal for display applications

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High Performance Visible Semiconductor Lasers Operating at 630 nm

Abstract

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High Performance Visible Semiconductor Lasers Operating at 630 nm

Abstract

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