The years of ‘happy scaling’ are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This paper provides an introduction to these challenges and gives an overview of the Grid infrastructure that will be developed as part of a recently funded EPSRC pilot project to address them, and we hope, which will revolutionise the electronics design industry
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
The increasing difficulty in the scaling of Complementary Metal Oxide Semiconductor (CMOS) devices h...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
The years of ‘happy scaling’ are over and the fundamental challenges that the semiconductor industry...
The fundamental challenges facing future electronics design is to address the decreasing – atomistic...
Publisher’s version is restricted access in accordance with The Royal Society policy. The original p...
The electronics design industry is facing major challenges as transistors continue to decrease in si...
This is a pre-print of a paper from UK e-Science All Hands Meeting 2008. http://www.allhands.org.uk/...
This is a pre-print of a paper from Proceedings of the Conference on Parallel and Distributed Comput...
CMOS transistor scaling has driven the phenome-nal success of the semiconductor industry, delivering...
C1 - Journal Articles RefereedThe project Meeting the Design Challenges of nano-CMOS Electronics (ht...
This is a pre-print of a paper from UK e-Science All Hands Meeting 2008. http://www.allhands.org.uk/...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
In this review, we will discuss a possible roadmap in scaling a nanoelectronic device from today's C...
Nanoelectronic devices of various kinds of are essential for VLSI circuits. The struggle to follow M...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
The increasing difficulty in the scaling of Complementary Metal Oxide Semiconductor (CMOS) devices h...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
The years of ‘happy scaling’ are over and the fundamental challenges that the semiconductor industry...
The fundamental challenges facing future electronics design is to address the decreasing – atomistic...
Publisher’s version is restricted access in accordance with The Royal Society policy. The original p...
The electronics design industry is facing major challenges as transistors continue to decrease in si...
This is a pre-print of a paper from UK e-Science All Hands Meeting 2008. http://www.allhands.org.uk/...
This is a pre-print of a paper from Proceedings of the Conference on Parallel and Distributed Comput...
CMOS transistor scaling has driven the phenome-nal success of the semiconductor industry, delivering...
C1 - Journal Articles RefereedThe project Meeting the Design Challenges of nano-CMOS Electronics (ht...
This is a pre-print of a paper from UK e-Science All Hands Meeting 2008. http://www.allhands.org.uk/...
AbstractThis paper briefly discusses the development of Metal Oxide Semiconductor Field Effect Trans...
In this review, we will discuss a possible roadmap in scaling a nanoelectronic device from today's C...
Nanoelectronic devices of various kinds of are essential for VLSI circuits. The struggle to follow M...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
The increasing difficulty in the scaling of Complementary Metal Oxide Semiconductor (CMOS) devices h...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...