Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII
- Boyd, E.
- Zhou, H.
- McLelland, H.
- Moran, D.A.J.
- Thoms, S.
- Thayne, I.G.
DOIAbstract
This work reports on the development and fabrication of High Electron Mobility Transistors with a gate length of less than 30nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bilayer of PMMA and UVIII. This is then transferred into SiO<sub>2</sub> gate support layer by a low damage dry-etch process. This method enables the fabrication of mechanically robust, ultra short T-gates to be realised
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