Enhancement Mode n-MOSFET with High-κ Dielectric on GaAs Substrate
- Rajagopalan, K.
- Zurcher, P.
- Abrokwah, J.
- Droopad, R.
- Moran, D.A.J.
- Hill, R.J.W.
- Li, X.
- Zhou, H.
- McIntyre, D.
- Thoms, S.
- Thayne, I.G.
- Passlack, M.
Publication date
January 2007
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
In this paper, we report MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric stack comprised of gallium oxide and gadolinium gallium oxide. Mobilities exceeding 12,000 and 6,000 cm2/Vs, for sheet carrier concentration ns of about 2.5x1012 cm-2 were measured on MOSFET structures on InP and GaAs substrates, respectively. These structures were designed for enhancement mode operation and include a 10 nm thick strained InGa1-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively
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