Charge collection efficiency of an irradiated cryogenic double- p silicon detector
- Borer, K.
- Janos, S.
- Li, Z.
- Dezillie, B.
- Da Via, C.
- Granata, V.
- Casagrande, L.
- de Boer, R.W.I.
- Lourenco, C.
- Niinikoski, T.O.
- Palmieri, V.G.
- Chapuy, S.
- Dimcovski, Z.
- Grigoriev, E.
- Bell, W.
- Devine, S.R.H.
- Ruggiero, G.
- O'Shea, V.
- Smith, K.
- Berglund, P.
- De Boer, W.
- Hauler, F.
- Heising, S.
- Jungermann, L.
- Abreu, M.
- Rato, P.
- Sousa, P.
- Cindro, V.
- Mikuz, M.
- Zavrtanik, M.
- Esposito, A.
- Paul, S.
- Buontempo, S.
- D'Ambrosio, N.
- Pagano, S.
- Eremin, V.
- Verbitskaya, E.
DOIAbstract
We present results on the measurement of the charge collection efficiency of a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage
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