The main material parameter of silicon is the minority carrier bulk lifetime and influences the effectiveness of photovoltaic cells. It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetime is necessary for modifying the whole technological process of production. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cle...
The buried contact cell design has a higher efficiency potential than the widely used screen print c...
We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflec...
One of the main challenges of the c-Si PV industry is the implementation of high quality surface pas...
The main material parameter of silicon is the minority carrier bulk lifetime and influences the effe...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is cha...
The buried contact solar cell is produced in industry using monocrystalline silicon. The low shading...
AbstractMinority carrier lifetime measurements are a major characterization technique regarding the ...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
A central quantity to assess the high quality of monocrystalline silicon (on scales beyond mere puri...
The buried contact cell design has a higher efficiency potential than the widely used screen print c...
We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflec...
One of the main challenges of the c-Si PV industry is the implementation of high quality surface pas...
The main material parameter of silicon is the minority carrier bulk lifetime and influences the effe...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Accurate measurements of bulk minority carrier lifetime are essential in order to determine the true...
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lif...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is cha...
The buried contact solar cell is produced in industry using monocrystalline silicon. The low shading...
AbstractMinority carrier lifetime measurements are a major characterization technique regarding the ...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-e...
A central quantity to assess the high quality of monocrystalline silicon (on scales beyond mere puri...
The buried contact cell design has a higher efficiency potential than the widely used screen print c...
We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflec...
One of the main challenges of the c-Si PV industry is the implementation of high quality surface pas...