Negative resistance amplifier circuit using GaAsFET modelled single MESFET

Negative resistance devices have attracted much attention in the wireless communication industry because of their low cost, better performance, high speed, and reduced power requirements. Although negative resistance circuits are non-linear circuits, they are associated with distortion, which may either be amplitude-to-amplitude distortion or amplitude-to-phase distortion. In this paper, a unique way of realizing a negative resistance amplifier is proposed using a single metal-semiconductor field-effect transistor (MESFET). Intermodulation distortion test (IMD) is performed to evaluate the characteristic response of the negative resistance circuit amplifier to different bias voltages using the harmonic balance (HB) of the advanced designed software (ADS 2016). The results obtained are compared to those of a conventional distributed amplifier. The findings of this study showed that the negative resistance amplifier spreads over a wider frequency output with reduced power requirements while the conventional distributed amplifier has a direct current (DC) offset with output voltage of 32.34 dBm