Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1−x heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 μeV in a gate-defined single quantum dot, hosted in molecular-beam-epitaxy-grown 68Si/SixGe1−x. The valley splitting is monotonically and reproducibly tunable up to 15% by gate voltages, originating from a 6-nm lateral displacement of the quantum dot. We observe static spin relaxation times T1>1 s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, T1 is limited by the valley hotspo...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...
Spins confined to atomically thin semiconductors are being actively explored as quantum information ...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterost...
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterost...
Although silicon is a promising material for quantum computation, the degeneracy of the conduction b...
Although silicon is a promising material for quantum computation, the degeneracy of the conduction b...
Silicon has many attractive properties for quantum computing, and the quantum-dot architecture is ap...
Abstract An electron spin qubit in silicon quantum dots holds promise for quantum information proces...
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting ...
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interac...
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interac...
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double q...
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double q...
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal di...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...
Spins confined to atomically thin semiconductors are being actively explored as quantum information ...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterost...
Valley splitting is a key feature of silicon-based spin qubits. Quantum dots in Si/SixGe1-x heterost...
Although silicon is a promising material for quantum computation, the degeneracy of the conduction b...
Although silicon is a promising material for quantum computation, the degeneracy of the conduction b...
Silicon has many attractive properties for quantum computing, and the quantum-dot architecture is ap...
Abstract An electron spin qubit in silicon quantum dots holds promise for quantum information proces...
In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting ...
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interac...
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interac...
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double q...
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double q...
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal di...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...
Spins confined to atomically thin semiconductors are being actively explored as quantum information ...
Quantum computing in nanoscale silicon heterostructures has received much attention, both from the s...