We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. © 2002 Elsevier Science B.V. All rights reserved
ZnSe films were deposited by pulsed laser ablation on a crystalline GaAs substrate and on an amorpho...
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Inst...
We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by sim...
We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (...
After the establishment of a reasonably detailed understanding of thin film electroluminescence (TFE...
ZnSe thin films with Al doping, were gtown on Ge(111) substrates by the molecular beam epitaxial met...
ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and th...
The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL s...
We have presented evidence that the blue emission band, which is dominant at room temperature in ZnS...
ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and th...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
Electroluminescent devices have been fabricated by depositing Al-doped ZnSTe onto GaAs substrates by...
In this work, white-emitting-alternating-current-thin film electroluminescent (w-ACTFEL) devices are...
We show that part of the resonance feature at 2.7 eV in the reflectance difference (RD) spectra of Z...
396-401In present work, nanostructured films of ZnSe are synthesized on glass substrates by using el...
ZnSe films were deposited by pulsed laser ablation on a crystalline GaAs substrate and on an amorpho...
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Inst...
We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by sim...
We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (...
After the establishment of a reasonably detailed understanding of thin film electroluminescence (TFE...
ZnSe thin films with Al doping, were gtown on Ge(111) substrates by the molecular beam epitaxial met...
ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and th...
The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL s...
We have presented evidence that the blue emission band, which is dominant at room temperature in ZnS...
ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and th...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
Electroluminescent devices have been fabricated by depositing Al-doped ZnSTe onto GaAs substrates by...
In this work, white-emitting-alternating-current-thin film electroluminescent (w-ACTFEL) devices are...
We show that part of the resonance feature at 2.7 eV in the reflectance difference (RD) spectra of Z...
396-401In present work, nanostructured films of ZnSe are synthesized on glass substrates by using el...
ZnSe films were deposited by pulsed laser ablation on a crystalline GaAs substrate and on an amorpho...
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Inst...
We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by sim...