The present work investigates the evolution of micro-Raman spectra of (1−x)Pb(Fe2/3W1/3)O3−xPbTiO3 (PFWT) (x=0.50) thin films in the temperature range from 80 to 600 K. Raman and dielectric data indicate that the crystal structure changes from tetragonal to cubic, i.e., a ferroelectric phase transition at 575 K. The dielectric properties of PFWT thin films were studied in the temperature range of 80–600 K over a wide range of frequencies. The slope of the reciprocal of the dielectric constant is 2:1, matched well with the simplest Landau free energy model, and it indicates a continuous second order displacive ferroelectric phase transition. ©2007 American Institute of Physic
Antiferroelectric materials are found to be good alternative material compositions for high-charge-s...
International audienceWe report a comparative Raman study of 0.65(PbMg1/3Nb2/3O3)-0.35(PbTiO3) (PMN-...
This describes research done on a variety of ferroelectric systems over the course of three years du...
We have carried out dielectric and Raman spectroscopy studies at the 298-623 K temperature range in ...
We have performed dielectric and micro-Raman spectroscopy measurements in the 298 - 673 K temperatur...
Polycrystalline Pb-0.Sr-60(0).40TiO3 thin films with the tetragonal perovskite structure were grown ...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin film...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb(1-x)Ba(x)TiO(3) thi...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-x-yCaxSryTiO3 thin...
Abstract. Raman spectra have been investigated in PbTiO thin films grown on Si by metalorganic chemi...
The evolution with temperature of the Raman activity in the (1 12x)Pb(Fe2 153W1 153)O3-xPbTiO3 solid...
Detailed room temperature micro-Raman scattering, X-ray diffraction, atomic force microscopy and spe...
We have studied the lattice dynamical properties of oriented Pb(Sc0.5Nb0.25Ta0.25)O3 (PSNT) thin fil...
Antiferroelectric materials are found to be good alternative material compositions for high-charge-s...
Amorphous state of PbTiO3 has been prepared. DTA, optical and electron-microscopic investigations ha...
Antiferroelectric materials are found to be good alternative material compositions for high-charge-s...
International audienceWe report a comparative Raman study of 0.65(PbMg1/3Nb2/3O3)-0.35(PbTiO3) (PMN-...
This describes research done on a variety of ferroelectric systems over the course of three years du...
We have carried out dielectric and Raman spectroscopy studies at the 298-623 K temperature range in ...
We have performed dielectric and micro-Raman spectroscopy measurements in the 298 - 673 K temperatur...
Polycrystalline Pb-0.Sr-60(0).40TiO3 thin films with the tetragonal perovskite structure were grown ...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-xCaxTiO3 thin film...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb(1-x)Ba(x)TiO(3) thi...
Dielectric and Raman scattering experiments were performed on polycrystalline Pb1-x-yCaxSryTiO3 thin...
Abstract. Raman spectra have been investigated in PbTiO thin films grown on Si by metalorganic chemi...
The evolution with temperature of the Raman activity in the (1 12x)Pb(Fe2 153W1 153)O3-xPbTiO3 solid...
Detailed room temperature micro-Raman scattering, X-ray diffraction, atomic force microscopy and spe...
We have studied the lattice dynamical properties of oriented Pb(Sc0.5Nb0.25Ta0.25)O3 (PSNT) thin fil...
Antiferroelectric materials are found to be good alternative material compositions for high-charge-s...
Amorphous state of PbTiO3 has been prepared. DTA, optical and electron-microscopic investigations ha...
Antiferroelectric materials are found to be good alternative material compositions for high-charge-s...
International audienceWe report a comparative Raman study of 0.65(PbMg1/3Nb2/3O3)-0.35(PbTiO3) (PMN-...
This describes research done on a variety of ferroelectric systems over the course of three years du...