Under electrical bias, mixed ionic conductors such as SrTiO3 are characterized by oxygen vacancy migration which leads to resistance degradation. The defect chemistry to describe the relationship between conductivity and oxygen vacancies is usually obtained by high temperature conductivity data or quenching experiments. These techniques can investigate the equilibrated state only. Here, we introduce a new approach using in-situ impedance studies with applied dc voltage to analyze the temperature dependent electrical properties of degraded SrTiO3 single crystals. This procedure is most beneficial since it includes electric field driven effects. The benefits of the approach are highlighted by comparing acceptor doped and undoped SrTiO3. This ...
Raw data used in the paper "Unravelling the Origin of Ultra-Low Conductivity in SrTiO3 Thin Films: S...
Initial study of leakage currents in TiO₂ showed that the leakage current varies and can increase si...
We studied the ionic/electronic transport and resistance degradation behavior of dielectric oxides b...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resis...
Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resis...
The effect of the electrode material on the high voltage stoichiometry-polarization ("electrocolora...
An approach to determine the defect energy levels of the Fe impurities in BaTiO3 and SrTiO3 single c...
An approach to determine the defect energy levels of the Fe impurities in BaTiO3 and SrTiO3 single c...
<div><p>The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped ...
<div><p>The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped ...
The investigation of the defect chemistry of solid oxides is of central importance for the understan...
Raw data used in the paper "Unravelling the Origin of Ultra-Low Conductivity in SrTiO3 Thin Films: S...
Initial study of leakage currents in TiO₂ showed that the leakage current varies and can increase si...
We studied the ionic/electronic transport and resistance degradation behavior of dielectric oxides b...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Under electrical bias, mixed ionic conductors such as SrTiO₃ are characterized by oxygen vacancy mig...
Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resis...
Defect chemistry and transport in Fe-doped SrTiO3 single crystal are studied to understand its resis...
The effect of the electrode material on the high voltage stoichiometry-polarization ("electrocolora...
An approach to determine the defect energy levels of the Fe impurities in BaTiO3 and SrTiO3 single c...
An approach to determine the defect energy levels of the Fe impurities in BaTiO3 and SrTiO3 single c...
<div><p>The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped ...
<div><p>The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped ...
The investigation of the defect chemistry of solid oxides is of central importance for the understan...
Raw data used in the paper "Unravelling the Origin of Ultra-Low Conductivity in SrTiO3 Thin Films: S...
Initial study of leakage currents in TiO₂ showed that the leakage current varies and can increase si...
We studied the ionic/electronic transport and resistance degradation behavior of dielectric oxides b...