Using the self-consistent Landau-Ginzburg-Devonshire approach we simulate and analyze the spontaneous formation of the domain structure in thin ferroelectric films covered with the surface screening charge represented by the Bardeen-type surface states. Hence we consider the competition between the screening and the domain formation as alternative ways to reduce the electrostatic energy and reveal unusual peculiarities of distributions of polarization, electric and elastic fields conditioned by the surface screening length and the flexocoupling strength. We have established that the critical thickness of the film and its transition temperature to a paraelectric phase strongly depend on the Bardeen screening length, while the flexocoupling a...
Strain engineering is a widespread strategy used to enhance performance of devices based on semicond...
Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient ...
Surface effects on switching behaviours of ferroelectric (FE) films are elucidated by using the Land...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical co...
Ferroelectric surfaces and interfaces are unique physical objects for fundamental studies of various...
The screening efficiency of a metal−ferroelectric interface plays a critical role in determining the...
Using the Landau–Ginzburg–Devonshire approach and numerical modeling, an influence of the misfit str...
Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulati...
We explore the role of flexoelectric effect in functional properties of nanoscale ferroelectric film...
Switchable polar properties of ferroelectric and multiferroic nanostructures are ideal to further di...
The effects originating from the interface or surface of a ferroelectric nano-thin film are accounte...
International audienceWe present a theoretical study on the influence of the flexoelectric coupling ...
The screening efficiency of a metal−ferroelectric interface plays a critical role in determining the...
The impact of flexoelectric coupling on polarization reversal and space-charge variation in thin fil...
Strain engineering is a widespread strategy used to enhance performance of devices based on semicond...
Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient ...
Surface effects on switching behaviours of ferroelectric (FE) films are elucidated by using the Land...
Polar and electromechanical properties of ferroelectric thin films including polarization domain for...
Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical co...
Ferroelectric surfaces and interfaces are unique physical objects for fundamental studies of various...
The screening efficiency of a metal−ferroelectric interface plays a critical role in determining the...
Using the Landau–Ginzburg–Devonshire approach and numerical modeling, an influence of the misfit str...
Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulati...
We explore the role of flexoelectric effect in functional properties of nanoscale ferroelectric film...
Switchable polar properties of ferroelectric and multiferroic nanostructures are ideal to further di...
The effects originating from the interface or surface of a ferroelectric nano-thin film are accounte...
International audienceWe present a theoretical study on the influence of the flexoelectric coupling ...
The screening efficiency of a metal−ferroelectric interface plays a critical role in determining the...
The impact of flexoelectric coupling on polarization reversal and space-charge variation in thin fil...
Strain engineering is a widespread strategy used to enhance performance of devices based on semicond...
Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient ...
Surface effects on switching behaviours of ferroelectric (FE) films are elucidated by using the Land...