SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reactive magnetron sputtering of a silicon target in an Argon/Nitrogen/Acetylene atmosphere. The mechanical, chemical and structural properties have been thoroughly investigated by means of indentation hardness testing, pin on disk wear testing in reciprocating sliding motion, GDOES, FT-IR, Raman spectroscopy, XPS and STA. The main aim of this investigation was to establish the relationship between deposition conditions, resulting mechanical, chemical and structural properties and the respective wear properties. Depending on their position in the Si–C–N phase diagram, the hardness of the films varies over a broad range, with maximum values of ...
6 pages, 7 figures, 1 table.Silicon nitride thin films were prepared by reactive sputtering from dif...
Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhanced radio-frequency (rf) ...
SiC films were prepared either by direct sputtering of a SiC target in Ar or by reactive sputtering ...
Silicon carbide coatings have been deposited by r.f. magnetron sputtering on AISI 304LN stainless st...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Silicon oxycarbide is a versatile material system that is attractive for many applications because o...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Ti–Si–C thin films were deposited onto silicon, stainless steel and high-speed steel substrates by m...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
Silicon carbonitride films were deposited on Si (100), Ge (111), and fused silica substrates through...
Si–C–N based materials exhibit promising properties such as excellent oxidation resistance and therm...
International audienceTribological properties of a silicon carbide homogeneous contact are often rel...
A systematic investigation on the deposition of silicon–carbon–nitride (Si–C–N) films under varying ...
SiCN coatings with continuous composition between Si3N4 and Sic (rich in Si) have been prepared by a...
6 pages, 7 figures, 1 table.Silicon nitride thin films were prepared by reactive sputtering from dif...
Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhanced radio-frequency (rf) ...
SiC films were prepared either by direct sputtering of a SiC target in Ar or by reactive sputtering ...
Silicon carbide coatings have been deposited by r.f. magnetron sputtering on AISI 304LN stainless st...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Silicon oxycarbide is a versatile material system that is attractive for many applications because o...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Ti–Si–C thin films were deposited onto silicon, stainless steel and high-speed steel substrates by m...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
Silicon carbonitride films were deposited on Si (100), Ge (111), and fused silica substrates through...
Si–C–N based materials exhibit promising properties such as excellent oxidation resistance and therm...
International audienceTribological properties of a silicon carbide homogeneous contact are often rel...
A systematic investigation on the deposition of silicon–carbon–nitride (Si–C–N) films under varying ...
SiCN coatings with continuous composition between Si3N4 and Sic (rich in Si) have been prepared by a...
6 pages, 7 figures, 1 table.Silicon nitride thin films were prepared by reactive sputtering from dif...
Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhanced radio-frequency (rf) ...
SiC films were prepared either by direct sputtering of a SiC target in Ar or by reactive sputtering ...