First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard sa...
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The results of measurements of BKalpha, NKalpha and CKalpha (ultra-soft X-ray emission spectra of bo...
Layered samples Si(100)/C/Ni/BC x N y and Si(100)/C/Cu/BC x N y were produced by physical vapor depo...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
First results are presented for the identification of chemical bonds and structures (speciation) in ...
SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by el...
During the last years the interest in silicon and boron carbonitrides developed remarkably. This int...
SiCxNy nanolayers were synthesized by a remote plasma enhanced chemical vapour deposition (RPECVD) m...
BCxNy films were produced from single-source precursors in a chemical vapor deposition process. The ...
The composition, structure, and optical characteristics of amorphous hydrogenated silicon carbonitri...
Films of BC x N y were produced in a plasma-enhanced chemical vapor deposition process using trimeth...
Layers of BCxNy were produced in a chemical vapour deposition (CVD) process using trimethylamine bor...
We investigated the photoluminescence (PL) and electronic properties of both undoped and doped silic...
International audienceThin films of carbon-rich boron carbonitride (h-B-C-N) were prepared by low pr...
Triethylamine borane (TEAB) and He, N2 or NH3 were applied as additional reaction gases in the produ...
Thin films of the B-C-N system have been synthesised by low pressure chemical vapour deposition and ...
The results of measurements of BKalpha, NKalpha and CKalpha (ultra-soft X-ray emission spectra of bo...
Layered samples Si(100)/C/Ni/BC x N y and Si(100)/C/Cu/BC x N y were produced by physical vapor depo...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
First results are presented for the identification of chemical bonds and structures (speciation) in ...
SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by el...
During the last years the interest in silicon and boron carbonitrides developed remarkably. This int...
SiCxNy nanolayers were synthesized by a remote plasma enhanced chemical vapour deposition (RPECVD) m...
BCxNy films were produced from single-source precursors in a chemical vapor deposition process. The ...
The composition, structure, and optical characteristics of amorphous hydrogenated silicon carbonitri...
Films of BC x N y were produced in a plasma-enhanced chemical vapor deposition process using trimeth...
Layers of BCxNy were produced in a chemical vapour deposition (CVD) process using trimethylamine bor...
We investigated the photoluminescence (PL) and electronic properties of both undoped and doped silic...
International audienceThin films of carbon-rich boron carbonitride (h-B-C-N) were prepared by low pr...
Triethylamine borane (TEAB) and He, N2 or NH3 were applied as additional reaction gases in the produ...
Thin films of the B-C-N system have been synthesised by low pressure chemical vapour deposition and ...
The results of measurements of BKalpha, NKalpha and CKalpha (ultra-soft X-ray emission spectra of bo...
Layered samples Si(100)/C/Ni/BC x N y and Si(100)/C/Cu/BC x N y were produced by physical vapor depo...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
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