A reliabily operating electronic circuitry for environmental temperatures up to 500 °C requires a satisfactorily wide energy gap, a good material stability and a suitable technology. These three points are reviewed regarding III–V semiconductors. Experimental results with AlxGa1−xAs are reviewed, which are usually monolithically associated with various types of sensors
Current and future needs in automative, aircraft, space, military, and well logging industries requi...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...
This paper presents the development of III-V based pseudomorphic high electron mobility transistors ...
The GAA (Gate-All-Around) transistor is one of the latest devices of the SOI family. It presents ele...
As part of a program to develop high temperature electronics for geothermal well instrumentation, a ...
This paper reviews the state of current electronics and states the drive toward high-temperature ele...
The use is described of metal-semiconductor diodes (Schottky diodes) as temperature sensors from roo...
International audienceHigh temperature power electronics has become possible with the recent availab...
Bandgap voltage reference Temperature sensor a b s t r a c t An investigation of the performance and...
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in ...
It is the objective of this work to focus on heat dissipation in gallium nitride based solid-state l...
SIGLELD:D50173/84 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
In the last years HBT with strongly improved performance for application at room temperature [1, 2] ...
In the last years HBT with strongly improved performance for application at room temperature [1, 2] ...
Current and future needs in automative, aircraft, space, military, and well logging industries requi...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...
This paper presents the development of III-V based pseudomorphic high electron mobility transistors ...
The GAA (Gate-All-Around) transistor is one of the latest devices of the SOI family. It presents ele...
As part of a program to develop high temperature electronics for geothermal well instrumentation, a ...
This paper reviews the state of current electronics and states the drive toward high-temperature ele...
The use is described of metal-semiconductor diodes (Schottky diodes) as temperature sensors from roo...
International audienceHigh temperature power electronics has become possible with the recent availab...
Bandgap voltage reference Temperature sensor a b s t r a c t An investigation of the performance and...
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in ...
It is the objective of this work to focus on heat dissipation in gallium nitride based solid-state l...
SIGLELD:D50173/84 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
In the last years HBT with strongly improved performance for application at room temperature [1, 2] ...
In the last years HBT with strongly improved performance for application at room temperature [1, 2] ...
Current and future needs in automative, aircraft, space, military, and well logging industries requi...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...
The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are present...