Hydride-VPE embedding of InAlGaAs laser structures with Sl InP:Fe

Hydride vapor phase epitaxy was used to selectively regrow semi-insulating InP:Fe over different InP-based laser mesa structures containing layers of the InAlGaAs material system with Al mol fractions up to 0.48. Although stable Al-containing oxides inhibit the direct epitaxial deposition on the InAlGaAs layer surfaces with high Al contents, the hydride regrowth resulted in voidfree and complete embeddings. The embedding process is presented and the regrowth was proved to be successful by very high speed laser diode operation