Add to ORKGAiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction analyses. Oxidation kinetics reveals that an abrupt change in the oxidation mechanism is observed in C-face oxide films when their thickness is around 10 nm, while a continuous change in the oxidation mechanism is observed in Si-face oxide films with thicknesses up to about 4 nm. This last thickness corresponds to the maximum width of the interfacial region. Changes observed in the oxidation mechanism were related to oxidation reaction and interfacial atom emission that may take place during oxide film growth. Besides, the act...
Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterize...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Aiming to understand the processes involved in the formation of the transition region between SiO2 a...
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectrosco...
The electrical performance of SiC-based microelectronic devices is strongly affected by the densitie...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion ...
Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterize...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Aiming to understand the processes involved in the formation of the transition region between SiO2 a...
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Oxidation is widely used to fabricate complex materials and structures, controlling the properties o...
Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectrosco...
The electrical performance of SiC-based microelectronic devices is strongly affected by the densitie...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion ...
Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterize...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...
Oxide thin films were grown on 4H-SiC at low pressure and reduced temperatures using a remote plasma...