Add to ORKGThe transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on a Si~111! substrate and determining the 29Si profiles, with subnanometric depth resolution, before and after oxidation in 50 mbar of dry O2 at 1000 °C for 60 min. The results constitute an experimental confirmation of a widely held belief that Si does not diffuse through the growing oxide to react with oxygen at the gas/oxide interface, leaving O2 as the only mobile species. [S0163-1829~99!10127-9
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was inve...
The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was inve...
Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (ap...
The diffusion of defects during the thermal growth of SiO2 film on Si(100) in dry O-2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si(100) in dry O-2 was investigat...
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of...
We investigated the mechanisms of thermal reoxidation in dry O2 of silicon oxynitride films prepared...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was inve...
The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was inve...
Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (ap...
The diffusion of defects during the thermal growth of SiO2 film on Si(100) in dry O-2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si(100) in dry O-2 was investigat...
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigat...
The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of...
We investigated the mechanisms of thermal reoxidation in dry O2 of silicon oxynitride films prepared...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopi...