Add to ORKGEffects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
We investigated the relationship between the band-offset, the gate leakage current, and the interfac...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350–11...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
We investigated the relationship between the band-offset, the gate leakage current, and the interfac...
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were in...
Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 f...
The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350–11...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrat...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 ...
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substr...
We investigated the relationship between the band-offset, the gate leakage current, and the interfac...