Add to ORKGWe study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with 12C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters or anti-site-related defects. Dynamic annealing causes simple ion-beam-generated Frenkel pairs to annihilate (or cluster) during irradiation at liquid nitrogen temperature and above. These beam-flux and irradiation-temperature effects are not observed...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150°C in a rapid thermal annealing ...
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studie...
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C io...
The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, ...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au)...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a rang...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantati...
The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling...
Damage evaluation processes in patterned GaN implanted by 3 MeV Au(2+) ions were investigated as a f...
The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion impla...
The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied ...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150°C in a rapid thermal annealing ...
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studie...
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C io...
The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, ...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au)...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a rang...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantati...
The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling...
Damage evaluation processes in patterned GaN implanted by 3 MeV Au(2+) ions were investigated as a f...
The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion impla...
The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied ...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150°C in a rapid thermal annealing ...
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studie...