This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT technologies and a 95 GHz receiver in 65 nm CMOS technology. Optimization and modeling of all passive components and transistor biasing at peak-fT and peak-fMAX current densities are employed to obtain higher frequency operation of circuit blocks compared to state of the art. These circuit blocks include static and dynamic frequency dividers, voltage-controlled oscillators, and tuned mm-wave amplifiers. Design procedures for a 100 GHz static divider, a 136 GHz dynamic divider, as well as low-power divider topologies are presented. A methodology for the design of quadrature voltage-controlled oscillators in CMOS and SiGe technologies is describe...
Scaling in silicon semiconductor process technology, although driven by digital applications, has al...
Abstract:This doctoral thesis is addresses two topics in integrated circuit design: multiband direct...
This paper presents an ultra-wideband single-chip radar transceiver MMIC around 240 GHz in a SiGe:C ...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
Todays society is set on its course for multi gigabits-per-second wireless connectivity, internet of...
In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive modu...
In the present work, broadband millimeter wave (mmW) receiver and transmitter circuits for wireless ...
Ranging from 30 to 300 GHz, millimeter-waves are whipping up flames of interest for all sorts of use...
Research in the mm-wave band using CMOS and SiGe technologies has gained momentum over the past few ...
A novel design approach for implementing millimeter wave wireless transceiver front-end circuits is ...
The thesis presents advanced circuits in CMOS for microwave and millimeter-wave communications. Firs...
This work presents silicon germanium (SiGe) based millimeter-wave (mm-wave) circuits and radar senso...
This thesis first presents a fully-integrated 16-way power combining amplifier for 67-92 GHz applica...
Scaling in silicon semiconductor process technology, although driven by digital applications, has al...
Abstract:This doctoral thesis is addresses two topics in integrated circuit design: multiband direct...
This paper presents an ultra-wideband single-chip radar transceiver MMIC around 240 GHz in a SiGe:C ...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
This dissertation explores high-speed silicon-germanium (SiGe) heterojunction bipolar transistor (HB...
Todays society is set on its course for multi gigabits-per-second wireless connectivity, internet of...
In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive modu...
In the present work, broadband millimeter wave (mmW) receiver and transmitter circuits for wireless ...
Ranging from 30 to 300 GHz, millimeter-waves are whipping up flames of interest for all sorts of use...
Research in the mm-wave band using CMOS and SiGe technologies has gained momentum over the past few ...
A novel design approach for implementing millimeter wave wireless transceiver front-end circuits is ...
The thesis presents advanced circuits in CMOS for microwave and millimeter-wave communications. Firs...
This work presents silicon germanium (SiGe) based millimeter-wave (mm-wave) circuits and radar senso...
This thesis first presents a fully-integrated 16-way power combining amplifier for 67-92 GHz applica...
Scaling in silicon semiconductor process technology, although driven by digital applications, has al...
Abstract:This doctoral thesis is addresses two topics in integrated circuit design: multiband direct...
This paper presents an ultra-wideband single-chip radar transceiver MMIC around 240 GHz in a SiGe:C ...