Monolithic IGBT gate driver in a conventional low-voltage BiCMOS process

grantor: University of TorontoThis thesis presents the design and implementation of a monolithic Insulated Gate Bipolar Transistor (IGBT) gate driver in a 5V high-density (0.8$\mu$m) conventional BiCMOS process. High voltage capability is achieved, without additional masks, using extended drain MOS transistor. The use of this process allows the high voltage portions of the circuit to be implemented on the same chip as the low voltage high density controlling circuits. The IGBT gate driver performs as an interface between a low power microcontroller and the IGBT power switch. The total area of the IGBT gate driver chip including pads is 4.84 mm$\sp2.$ The total power dissipation in the gate driver is less than 500 mW. It provides enough voltage and current to drive a mid power IGBT (100A, 500V). The gate driver out-put voltage ranges from 15V to $-$10V. The output current slew rate is in the order of 1A/$\mu$s, and the switching frequency of the driver is in the order of 10KHz. The gate driver provides the IGBT with protection against unintentional turn-on and desaturation failure. The unintentional IGBT turn-on protection disables the gate driver if its rail-to-rail power supply voltage is not enough to turn on the IGBT efficiently. The desaturation failure protection turns off the IGBT if the device is 'on' and its output voltage rises beyond its predefined value.M.A.Sc