We report the effect of La0.7Sr0.3MnO3 (LSMO) electrodes on the temperature dependence of the magnetoresistance (MR) of LSMO/polymer/cobalt spin valves (SVs). LSMO films have been prepared by pulsed laser deposition on three different single crystal substrates using different deposition parameters. The films were characterized for their surface morphologies, structural, magnetic, and magnetotransport properties. Low deposition rate is found to be detrimental for growth of good quality films and polycrystalline films with grain boundary effects are observed in thicker films. The films on MGO (100) substrate show a broad paramagnetic to ferromagnetic transition, accompanied with a metal-insulator transition below room temperature. This indica...
Large low-field magnetoresistance (LFMR) of Delta rho/rho(H) = 40% is obtained at 163 K within +/-30...
Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily ...
One of the most challenging tasks in future nanoelectronics is the realization of novel low-power co...
We report the effect of La0.7Sr0.3MnO3 (LSMO) electrodes on the temperature dependence of the magnet...
Magnetotransport of La0.7Sr0.3MnO3 (LSMO)/regioregular poly3-hexylthiophene (rr-P3HT) interfaces wer...
Magnetotransport of La0.7Sr0.3MnO3 (LSMO)/regioregular poly3-hexylthiophene (rr-P3HT) interfaces wer...
Journal ArticleWe fabricated spin-valve devices made of organic semiconductor thin films sandwiched ...
xv, 133 leaves : ill. (some col.) ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577M AP 2009 ChanYGia...
The magnetoresistive properties of lanthanum manganites are attracting considerable interest of rese...
We have investigated low temperature magnetic properties of La0.7Sr0.3MnO3 (LSMO) thin films on SrTi...
Among spintronic materials, mixed-valence manganite La(0.7)Sr(0.3)MnO(3) (LSMO) is widely investigat...
Colossal magnetoresistive manganite La0.7Sr0.3MnO3 (LSMO) films were prepared by pulsed laser deposi...
Half-metals due to their high spin polarization play a key role in spintronics. We have chosen to st...
Mesostructured nonsilicate materials, particularly mixed-metal oxides, are receiving much attention ...
Ferromagnetic materials exhibiting at room temperature combination of good conductivity, magnetic an...
Large low-field magnetoresistance (LFMR) of Delta rho/rho(H) = 40% is obtained at 163 K within +/-30...
Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily ...
One of the most challenging tasks in future nanoelectronics is the realization of novel low-power co...
We report the effect of La0.7Sr0.3MnO3 (LSMO) electrodes on the temperature dependence of the magnet...
Magnetotransport of La0.7Sr0.3MnO3 (LSMO)/regioregular poly3-hexylthiophene (rr-P3HT) interfaces wer...
Magnetotransport of La0.7Sr0.3MnO3 (LSMO)/regioregular poly3-hexylthiophene (rr-P3HT) interfaces wer...
Journal ArticleWe fabricated spin-valve devices made of organic semiconductor thin films sandwiched ...
xv, 133 leaves : ill. (some col.) ; 30 cm.PolyU Library Call No.: [THS] LG51 .H577M AP 2009 ChanYGia...
The magnetoresistive properties of lanthanum manganites are attracting considerable interest of rese...
We have investigated low temperature magnetic properties of La0.7Sr0.3MnO3 (LSMO) thin films on SrTi...
Among spintronic materials, mixed-valence manganite La(0.7)Sr(0.3)MnO(3) (LSMO) is widely investigat...
Colossal magnetoresistive manganite La0.7Sr0.3MnO3 (LSMO) films were prepared by pulsed laser deposi...
Half-metals due to their high spin polarization play a key role in spintronics. We have chosen to st...
Mesostructured nonsilicate materials, particularly mixed-metal oxides, are receiving much attention ...
Ferromagnetic materials exhibiting at room temperature combination of good conductivity, magnetic an...
Large low-field magnetoresistance (LFMR) of Delta rho/rho(H) = 40% is obtained at 163 K within +/-30...
Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily ...
One of the most challenging tasks in future nanoelectronics is the realization of novel low-power co...