Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencie