Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e.g., by creating spurious electrical responses. Predicting lateral effects in two dimensions typically requires computationally heavy 3-D finite element modelling. Here, dispersion characteristics calculated using a 1-D transfer matrix model are used in a finite-element software to model lateral resonance modes of sol-idly-mounted bulk acoustic wave resonators. Based on the resulting spectrum of 2-D eigenmodes, elec-trical frequency response as well as mechanical displacement is then calculated using mode superposi-tion. Resonators with elliptic and rectangular shapes are studied. Simulated results for ellipses are com-pared to measured electr...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
A heterodyne laser interferometer is used to study acoustic wave fields excited in a 1.8 GHz AlN thi...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
International audienceInterest in thin-film bulk acoustic wave resonator (FBAR) devices is driven by...
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
A heterodyne laser interferometer is used to study acoustic wave fields excited in a 1.8 GHz AlN thi...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
International audienceInterest in thin-film bulk acoustic wave resonator (FBAR) devices is driven by...
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measure...
A heterodyne laser interferometer is used to study acoustic wave fields excited in a 1.8 GHz AlN thi...