A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wav...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement ...
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is ...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
Noise parameter measurement set-up for 60 GHz is described. The designed and built set-up is based o...
Different noise parameter measurement methods and receiver requirements are discussed. A set-up for ...
Several current and planned space missions for earth observation and astronomy require very low nois...
The authors present a method for calibrating the four noise parameters of a noise receiver which doe...
The theoretical background of thermal noise representation in two-port networks is presented. From t...
Several current and planned scientific, commercial, and military applications require millimetre wav...
On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz fre...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wav...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement ...
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is ...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
Noise parameter measurement set-up for 60 GHz is described. The designed and built set-up is based o...
Different noise parameter measurement methods and receiver requirements are discussed. A set-up for ...
Several current and planned space missions for earth observation and astronomy require very low nois...
The authors present a method for calibrating the four noise parameters of a noise receiver which doe...
The theoretical background of thermal noise representation in two-port networks is presented. From t...
Several current and planned scientific, commercial, and military applications require millimetre wav...
On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 GHz fre...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
The focus of this thesis is on the development of on-wafer measurement techniques for millimeter wav...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...