Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H+ and 4He+ ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the films studied have an average mass density of 2.6±0.1 g/cm3. The bonding ratio sp3/sp2 is typically 70% measured with the electron spectroscopy for chemical analysis technique. Impurities and their depth distributions were deduced from the particle induced x-ray emission and secondary ion mass spectrometry (SIMS) measurements. Distributions of implanted and co-deposited hydrogen were measured by the nuclear resonance reaction 1H(15N,αγ)12C and SIMS. It was found that annealing behavi...
Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode w...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...
Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen ...
Properties of physical vapor deposited diamond-like carbon films and the migration of hydrogen in co...
This present study aims to determine the hydrogen influence on the electrical gap of diamond-like ca...
Diamond-like carbon (DLC) films were prepared from a hydrocarbon precursor gas by plasma source ion ...
Unbalanced magnetron sputtering (UBMS) is suitable for the preparation of hard and hydrogen-free dia...
Unbalanced magnetron sputtering (UBMS) is suitable for the preparation of hard and hydrogen-free dia...
International audienceThe aim of this work is to study the mechanical properties of Deuterated Diamo...
X-Ray reflectivity is used to determine the electron density profiles normal to the surface of diamo...
A series of hydrogenated diamondlike carbon films grown using plasma-enhanced chemical-vapor deposit...
Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode w...
The incorporation of hydrogen within ultrananocrystalline diamond/amorphous carbon composite films h...
Hydrogenated and deuterated amorphous silicon carbon films were prepared by plasma enhanced chemical...
Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode w...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...
Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen ...
Properties of physical vapor deposited diamond-like carbon films and the migration of hydrogen in co...
This present study aims to determine the hydrogen influence on the electrical gap of diamond-like ca...
Diamond-like carbon (DLC) films were prepared from a hydrocarbon precursor gas by plasma source ion ...
Unbalanced magnetron sputtering (UBMS) is suitable for the preparation of hard and hydrogen-free dia...
Unbalanced magnetron sputtering (UBMS) is suitable for the preparation of hard and hydrogen-free dia...
International audienceThe aim of this work is to study the mechanical properties of Deuterated Diamo...
X-Ray reflectivity is used to determine the electron density profiles normal to the surface of diamo...
A series of hydrogenated diamondlike carbon films grown using plasma-enhanced chemical-vapor deposit...
Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode w...
The incorporation of hydrogen within ultrananocrystalline diamond/amorphous carbon composite films h...
Hydrogenated and deuterated amorphous silicon carbon films were prepared by plasma enhanced chemical...
Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode w...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...
Plasma immersion ion implantation with hydrocarbon gases (HC-PIII) leads to both carbon implantation...