Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed
With the development of a range of sub–micron devices elements inthralnyh large schemes, a number of...
The work described here has been the development of a technique for fabrication of absorber patterns...
Plasma process is a highly selective technique exploiting the individual or mixed function of positi...
Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated cir...
The relationship between microstructure of tungsten thin films and plasma etching properties has bee...
The plasma etch behaviour of magnetron sputtered tungsten films has been studied. Structured experim...
Etch rate, etch rate uniformity, linewidth uniformity, and microloading in tungsten, molybdenum, and...
Tungsten and polysilicon layers were etched in three different types of etching equipment, in differ...
Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The inf...
Ice lithography (IL) fabricates 2D and 3D patterns using electron-solid interaction principle. Herei...
This paper investigates high resolution, low damage dry etching of tungsten, a suitable candidate fo...
This paper investigates high resolution, low damage dry etching of tungsten, a suitable candidate fo...
The feasibility of utilizing NF3-mixed halocarbon etchants to anisotropically etch tungsten polycide...
Thin films of tungsten and tungsten silicide were etched both within and downstream from a C12 plasm...
This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon t...
With the development of a range of sub–micron devices elements inthralnyh large schemes, a number of...
The work described here has been the development of a technique for fabrication of absorber patterns...
Plasma process is a highly selective technique exploiting the individual or mixed function of positi...
Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated cir...
The relationship between microstructure of tungsten thin films and plasma etching properties has bee...
The plasma etch behaviour of magnetron sputtered tungsten films has been studied. Structured experim...
Etch rate, etch rate uniformity, linewidth uniformity, and microloading in tungsten, molybdenum, and...
Tungsten and polysilicon layers were etched in three different types of etching equipment, in differ...
Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The inf...
Ice lithography (IL) fabricates 2D and 3D patterns using electron-solid interaction principle. Herei...
This paper investigates high resolution, low damage dry etching of tungsten, a suitable candidate fo...
This paper investigates high resolution, low damage dry etching of tungsten, a suitable candidate fo...
The feasibility of utilizing NF3-mixed halocarbon etchants to anisotropically etch tungsten polycide...
Thin films of tungsten and tungsten silicide were etched both within and downstream from a C12 plasm...
This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon t...
With the development of a range of sub–micron devices elements inthralnyh large schemes, a number of...
The work described here has been the development of a technique for fabrication of absorber patterns...
Plasma process is a highly selective technique exploiting the individual or mixed function of positi...