Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (~8 cm2 V-1 s-1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2O3 semiconductor layers from precursor-solution is performed on a Al2O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ~0 V for enhancement-mode operation