RF MEMS-MMIC building blocks for emerging wireless systems and RF-sensing applications

In this paper we present the main scope and initial results obtained within a pan-European research activity aiming at a successful monolithic integration of innovative RF MEMS switches into a standard GaAs MMIC process technology. Measured results of a fabricated ohmic contact type of RF MEMS switch developed by the OMMIC foundry show promising results e.g. in terms of low RF losses (0.2-0.4 dB is obtained from DC up to 30 GHz). The experimentally verified GaAs based RF MEMS switch has further been used to design low-loss MMIC building blocks such as switching, matching and phase shifting circuits for various RF applications up to 40 GHz. (12 refs.